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Title:
METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2016/147824
Kind Code:
A1
Abstract:
In the present invention, a crucible having a top face, a bottom face on the opposite side from the top face, and a cylindrical side face positioned between the top face and the bottom face, a first radiation thermometer which is capable of measuring the temperature of the side face, and a second radiation thermometer which is capable of measuring the temperature of the bottom face are prepared. A source material and a seed crystal are placed inside the crucible. The source material is sublimated in order to cause a silicon carbide single crystal to grow on the seed crystal. Steps for growing the silicon carbide single crystal include a step of measuring the temperature of the side face with the first radiation thermometer, and a step of measuring the temperature of the bottom face with the second radiation thermometer. Ra1 and Ra2 are 10 μm or less and an absolute value of the difference between Ra1 and Ra2 is less than 1 μm where Ra1 is the arithmetic average roughness of a temperature measuring region of the side face and Ra2 is the arithmetic average roughness of a temperature measuring region of the bottom face. This present invention provides a method for producing a silicon carbide single crystal that allows temperature distribution inside the crucible to be accurately controlled.

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Inventors:
SAKURADA TAKASHI (JP)
KIMURA REN (JP)
TAKASUKA EIRYO (JP)
NAKATA HIROHIKO (JP)
Application Number:
PCT/JP2016/055449
Publication Date:
September 22, 2016
Filing Date:
February 24, 2016
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C23C14/06; C23C14/24; C30B23/00
Domestic Patent References:
WO2009041578A12009-04-02
Foreign References:
JP2015013762A2015-01-22
JP2007314358A2007-12-06
JP2015013761A2015-01-22
JPH07330493A1995-12-19
JPH0753295A1995-02-28
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
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