Title:
METHOD FOR PRODUCING SILICON FILM, AND SILICON FILM
Document Type and Number:
WIPO Patent Application WO/2024/004998
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a method for producing a silicon film, in which a cyclic silane compound is reduced in heat history and excellent film thickness evenness or step coverage is attained. The present invention relates to a method for producing a silicon film, characterized by heating a substrate inserted into the reaction chamber of a cold wall type thermal CVD device and simultaneously feeding a cyclic silane compound to the reaction chamber to form a silicon film on the substrate.
Inventors:
YAMAMOTO TETSUYA (JP)
ABE TAKASHI (JP)
AKIYAMA TATSUHIKO (JP)
TERAMOTO AKINOBU (JP)
ABE TAKASHI (JP)
AKIYAMA TATSUHIKO (JP)
TERAMOTO AKINOBU (JP)
Application Number:
PCT/JP2023/023750
Publication Date:
January 04, 2024
Filing Date:
June 27, 2023
Export Citation:
Assignee:
NIPPON CATALYTIC CHEM IND (JP)
UNIV HIROSHIMA (JP)
UNIV HIROSHIMA (JP)
International Classes:
H01L21/205; C07F7/08; C23C16/24
Foreign References:
| JP2014045143A | 2014-03-13 | |||
| JPH0242724A | 1990-02-13 | |||
| JPS60246625A | 1985-12-06 | |||
| JP2004523903A | 2004-08-05 | |||
| JP2005236264A | 2005-09-02 | |||
| JP2015053382A | 2015-03-19 |
Attorney, Agent or Firm:
USFI PATENT ATTORNEYS INTERNATIONAL OFFICE (JP)
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