Title:
METHOD FOR PRODUCING SILICON MONOCRYSTAL
Document Type and Number:
WIPO Patent Application WO/2022/254885
Kind Code:
A1
Abstract:
The purpose of the present invention is to maintain the value of v/G so as to be uniform when pulling up a silicon monocrystal from a silicon melt by the Czochralski method, and even if the crystal diameter periodically fluctuates, control the amount of change in diameter to within a certain range, and thereby grow a silicon monocrystal having a high defect-free area ratio and a low defect density along the entire length of the crystal. The present invention is a method for manufacturing a silicon monocrystal in which a silicon melt M is formed in a crucible by performing heating by a heater 4 and a silicon monocrystal C is grown by the Czochralski method, the method for manufacturing a silicon monocrystal being provided with: a step in which, in the pulling-up of a straight body part in the manufacture of the silicon monocrystal, the pulling-up speed of the crystal pulled up while being made to rotate about an axis is set so as to be uniform, and the output of the heater is controlled so that the temperature gradient at the solid-liquid interface is uniform; and a step in which during the step for controlling the output of the heater, the crystal rotation speed is controlled so as to maintain the relationship -0.0335 < (diameter change amount/time (mm/min)) < 0.0335.
Inventors:
ABE YOSHIAKI (JP)
TSUBOTA HIROYUKI (JP)
TSUBOTA HIROYUKI (JP)
Application Number:
PCT/JP2022/012658
Publication Date:
December 08, 2022
Filing Date:
March 18, 2022
Export Citation:
Assignee:
GLOBALWAFERS JAPAN CO LTD (JP)
International Classes:
C30B29/06; C30B15/20
Foreign References:
| JP2013159525A | 2013-08-19 |
Attorney, Agent or Firm:
KINOSHITA Shigeru (JP)
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