Title:
METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2017/082112
Kind Code:
A1
Abstract:
[Problem] To provide a method for producing a silicon single crystal with which it is possible to produce a silicon single crystal that has a low carbon concentration. [Solution] A method for producing a silicon single crystal by the Czochralski method, wherein the method is provided with a raw material melting step for heating a silicon raw material in a quartz crucible 11 using a carbon heater 15 and producing a silicon melt 5, and a crystal pulling step for pulling a single crystal from the silicon melt 5 produced by the raw material melting step. In the raw material melting step, the maximum surface temperature of a first portion 15zu of the heater 15 located above the upper end 11a of the quartz crucible 11 is maintained at less than 1500°C, and the silicon raw material is heated.
Inventors:
KAJIWARA KAORU (JP)
SUEWAKA RYOTA (JP)
TANAKA HIDEKI (JP)
KANEHARA TAKAHIRO (JP)
SUEWAKA RYOTA (JP)
TANAKA HIDEKI (JP)
KANEHARA TAKAHIRO (JP)
Application Number:
PCT/JP2016/082376
Publication Date:
May 18, 2017
Filing Date:
November 01, 2016
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
C30B29/06; C30B15/14
Domestic Patent References:
| WO2003029533A1 | 2003-04-10 |
Foreign References:
| JP2009286650A | 2009-12-10 | |||
| JPH05294782A | 1993-11-09 | |||
| JP2011121827A | 2011-06-23 | |||
| JPS58172292A | 1983-10-11 |
Attorney, Agent or Firm:
WASHIZU Mitsuhiro et al. (JP)
Download PDF:
Previous Patent: NOVEL HETEROCYCLE-CONTAINING AMINO ACID COMPOUND AND USE THEREOF
Next Patent: ROLL-IN MARGARINE
Next Patent: ROLL-IN MARGARINE