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Title:
METHOD FOR PRODUCING THERMOELECTRIC CONVERSION MATERIAL
Document Type and Number:
WIPO Patent Application WO/2014/007225
Kind Code:
A1
Abstract:
The present invention provides a method for producing a thermoelectric conversion material having excellent thermoelectric conversion efficiency, in which a thermoelectric thin film that reflects, with high accuracy, the composition ratio of a thermoelectric semiconductor material that serves as a starting material is formed on a porous substrate with excellent adhesion between the porous substrate and the thin film. This method for producing a thermoelectric conversion material, wherein a thin film of a thermoelectric semiconductor material containing two or more elements is formed on a porous substrate, is characterized by comprising: a step wherein a film of the thermoelectric semiconductor material is formed on the porous substrate using an arc plasma deposition method; and a step wherein a heat treatment is performed during the film formation step and/or after the film formation step.

Inventors:
KATO KUNIHISA (JP)
MIYAZAKI KOJI (JP)
MUTOU TSUYOSHI (JP)
KONDO TAKESHI (JP)
NAGAMOTO KOICHI (JP)
Application Number:
PCT/JP2013/068071
Publication Date:
January 09, 2014
Filing Date:
July 01, 2013
Export Citation:
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Assignee:
KYUSHU INST TECHNOLOGY (JP)
LINTEC CORP (JP)
International Classes:
H01L35/34; C22C28/00; H01L35/14; C22C22/00; C22C38/00
Foreign References:
JP2006287000A2006-10-19
JP2011171304A2011-09-01
JP2007179963A2007-07-12
JP2004179643A2004-06-24
JPH11317547A1999-11-16
JP2010278449A2010-12-09
Attorney, Agent or Firm:
OHTANI, Tamotsu et al. (JP)
Tamotsu Otani (JP)
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