Title:
METHOD FOR REMOVING PHOTORESIST PARTICLES
Document Type and Number:
WIPO Patent Application WO/2023/200027
Kind Code:
A1
Abstract:
A method or removing photoresist particles according to an embodiment of the present invention is a method for removing photoresist particles in a development step for forming a pattern on an exposed semiconductor wafer, the development step comprising: a first process for spraying developer on a wafer for a first duration; and a second process for spraying DI water on the wafer for a second duration, wherein the second process includes a process for spraying DI water, to which megasonics of a frequency of 1 MHz to 5 MHz is applied, on a wafer having a photoresist pattern while rotating the wafer at a prescribed speed.
Inventors:
SIM JAE HEE (KR)
Application Number:
PCT/KR2022/005420
Publication Date:
October 19, 2023
Filing Date:
April 14, 2022
Export Citation:
Assignee:
OLDOWAN INC (KR)
International Classes:
G03F7/40; B08B3/02; B08B3/12
Foreign References:
| JP2013016857A | 2013-01-24 | |||
| KR20060042274A | 2006-05-12 | |||
| US20100227069A1 | 2010-09-09 | |||
| JP2020203234A | 2020-12-24 | |||
| JP2006066799A | 2006-03-09 |
Attorney, Agent or Firm:
KIM, Hong Suk (KR)
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