METHOD OF TREATING SURFACE, SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND APPARATUS FOR TREATMENT

Title:

METHOD OF TREATING SURFACE, SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND APPARATUS FOR TREATMENT

Document Type and Number:

WIPO Patent Application WO/2003/065434

Kind Code:

A1

Abstract:

A method of surface treatment in which a surface having a structure formed thereon is treated with a supercritical fluid (4), characterized by adding ammonium hydroxide, an alkanolamine, a fluoroamine, hydrofluoric acid, or the like as a dissolution aid (5) to the supercritical fluid (4). A surface-active substance (6) may be added to the supercritical fluid (4) together with the dissolution aid (5). The surface-active substance (6) may comprise a polar solvent. The method enables residues to be removed without fail by treatment with the supercritical fluid as the only treatment.

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Inventors:

SAGA KOICHIRO (JP)

Application Number:

PCT/JP2003/000938

Publication Date:

August 07, 2003

Filing Date:

January 30, 2003

Export Citation:

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Assignee:

SONY CORP (JP)
SAGA KOICHIRO (JP)

International Classes:

B81C99/00; B81B3/00; B81C1/00; C11D7/08; C11D7/32; C11D7/50; C11D11/00; G03F1/00; G03F1/82; G03F7/42; H01L21/304; H01L21/306; H01L21/308; (IPC1-7): H01L21/304

Domestic Patent References:

WO2001033613A2	2001-05-10
WO2002015251A1	2002-02-21
WO2002080233A2	2002-10-10

Foreign References:

JPH10135170A	1998-05-22
JPH1099806A	1998-04-21
EP0822583A2	1998-02-04
EP0829312A2	1998-03-18

Other References: