Title:
METHOD FOR USE IN FABRICATING LOW-TEMPERATURE POLYSILICON THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/192009
Kind Code:
A1
Abstract:
A method for use in fabricating a low-temperature polysilicon thin film transistor, comprising: sequentially forming a gate layer (113), an active layer (122), a source/drain contact layer (132), and a source/drain electrode (141) on a base substrate (111). The process of forming the source/drain contact layer (132) comprises: forming a channel protective layer (131); depositing an ohmic contact layer by means of a plasma enhanced chemical vapor deposition method by using a reaction gas containing diborane; patterning the ohmic contact layer, thus forming the source/drain contact layer (132). During the process of depositing the ohmic contact layer, boron ions enter into the source/drain contact layer. By means of said method, using a mask to define a boron ion implantation region is no longer required, and the process of implanting boron ions is eliminated, thus simplifying the technological process and reducing manufacturing costs.
More Like This:
Inventors:
LI SONGSHAN (CN)
Application Number:
PCT/CN2017/083060
Publication Date:
October 25, 2018
Filing Date:
May 04, 2017
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L21/336; H01L21/285; H01L29/786
Foreign References:
| CN105789327A | 2016-07-20 | |||
| CN105070724A | 2015-11-18 | |||
| CN102832169A | 2012-12-19 |
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
Download PDF: