Title:
METHOD FOR WORKING SEMICONDUCTOR WAFER
Document Type and Number:
WIPO Patent Application WO/1998/011600
Kind Code:
A1
Abstract:
A method for working a semiconductor wafer by which a highly accurate flat surface of a semiconductor wafer is formed with a high controllability by working a film formed on the uneven surface of a semiconductor wafer with a vertical working face having a diameter which is 1-2 times larger than that of the wafer while a working solution is supplied from a supplying port provided in the working face. Since the working face has a small diameter, the surface to be worked can be dressed in a high quality. Moreover, since the working face is vertical, any semiconductor wafer can be worked easily, even though the diameter of the wafer is larger.
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Inventors:
YASUI KAN (JP)
MORIYAMA SHIGEO (JP)
YAMAGUCHI KATSUHIKO (JP)
HOMMA YOSHIO (JP)
MORIYAMA SHIGEO (JP)
YAMAGUCHI KATSUHIKO (JP)
HOMMA YOSHIO (JP)
Application Number:
PCT/JP1996/002634
Publication Date:
March 19, 1998
Filing Date:
September 13, 1996
Export Citation:
Assignee:
HITACHI LTD (JP)
YASUI KAN (JP)
MORIYAMA SHIGEO (JP)
YAMAGUCHI KATSUHIKO (JP)
HOMMA YOSHIO (JP)
YASUI KAN (JP)
MORIYAMA SHIGEO (JP)
YAMAGUCHI KATSUHIKO (JP)
HOMMA YOSHIO (JP)
International Classes:
B24B7/22; B24B53/007; H01L21/306; H01L21/3105; (IPC1-7): H01L21/304
Foreign References:
| JPH07251371A | 1995-10-03 | |||
| JPH02199834A | 1990-08-08 | |||
| JPH0722518A | 1995-01-24 | |||
| JPH05136133A | 1993-06-01 | |||
| JPH07201790A | 1995-08-04 | |||
| JPH06170728A | 1994-06-21 | |||
| JPH06291291A | 1994-10-18 |
Attorney, Agent or Firm:
Ogawa, Katsuo (5-1, Marunouchi 1-chom, Chiyoda-ku Tokyo 100, JP)
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