METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING MESA STRUCTURES AND MULTIPLE PASSIVATION LAYERS AND RELATED DEVICES

Title:

METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING MESA STRUCTURES AND MULTIPLE PASSIVATION LAYERS AND RELATED DEVICES

Document Type and Number:

WIPO Patent Application WO2004059808

Kind Code:

A3

Abstract:

A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A first passivation layer can be formed on at least portions of the mesa sidewalls and on the substrate adjacent the mesa sidewalls wherein at least a portion of the mesa surface is free of the first passivation layer and wherein the first passivation layer comprises a first material. A second passivation layer can be formed on the first passivation layer wherein at least a portion of the mesa surface is free of the second passivation layer, and wherein the second passivation layer comprises a second material different than the first material. Related devices are also discussed.

Inventors:

HABERERN KEVIN W (US)
ROSADO RAYMOND (US)
BERGMANN MICHAEL J (US)
EMERSON DAVID T (US)

Application Number:

PCT/US2003/040682

Publication Date:

December 09, 2004

Filing Date:

December 18, 2003

Export Citation:

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Assignee:

CREE INC (US)
HABERERN KEVIN W (US)
ROSADO RAYMOND (US)
BERGMANN MICHAEL J (US)
EMERSON DAVID T (US)

International Classes:

C30B1/00; H01L21/00; H01L33/14; H01S5/042; H01S5/22; H01S5/223; H01S5/323; H01S5/227; (IPC1-7): H01S5/028; H01S5/323

Domestic Patent References:

WO2004047244A1	2004-06-03
WO2001095446A1	2001-12-13

Foreign References:

US5208183A	1993-05-04
FR2613547A1	1988-10-07
US6365968B1	2002-04-02
EP1039600A2	2000-09-27
US20020159494A1	2002-10-31

Other References:

KOREN U ET AL: "INGAASP/INP UNDERCUT MESA LASER WITH PLANAR POLYIMIDE PASSIVATION", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 42, no. 5, March 1983 (1983-03-01), pages 403 - 405, XP000706209, ISSN: 0003-6951

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