METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING SELF ALIGNED SEMICONDUCTOR MESAS AND CONTACT LAYERS AND RELATED DEVICES

Title:

METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING SELF ALIGNED SEMICONDUCTOR MESAS AND CONTACT LAYERS AND RELATED DEVICES

Document Type and Number:

WIPO Patent Application WO2004059809

Kind Code:

A3

Abstract:

Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact layer has sidewalls and a contact surface opposite the mesa surface and wherein the contact layer extends across substantially an entirety of the mesa surface. A passivation layer can be formed on the mesa sidewalls and on portions of the contact layer sidewalls adjacent the mesa surface, and the passivation layer can expose substantially an entirety of the contact surface of the contact layer.

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Inventors:

HABERERN KEVIN W (US)
BERGMANN MICHAEL J (US)
ROSADO RAYMOND (US)
EMERSON DAVID T (US)

Application Number:

PCT/US2003/040377

Publication Date:

April 07, 2005

Filing Date:

December 18, 2003

Export Citation:

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Assignee:

CREE INC (US)
HABERERN KEVIN W (US)
BERGMANN MICHAEL J (US)
ROSADO RAYMOND (US)
EMERSON DAVID T (US)

International Classes:

C30B1/00; H01L21/00; H01L33/14; H01S5/042; H01S5/22; H01S5/223; H01S5/323; H01S5/227; (IPC1-7): H01S5/323; H01S5/223

Domestic Patent References:

WO2001095446A1

2001-12-13

Foreign References:

US5208183A	1993-05-04
EP0450255A1	1991-10-09
US20020034204A1	2002-03-21
US20020048835A1	2002-04-25
US6134368A	2000-10-17
EP1146616A2	2001-10-17

Other References:

SHUJI NAKAMURA ET AL: "RIDGE-GEOMETRY INGAN MULTI-QUANTUM-WELL-STRUCTURE LASER DIODES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 69, no. 10, 2 September 1996 (1996-09-02), pages 1477 - 1479, XP000629154, ISSN: 0003-6951

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