Title:
MICRO LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2023/143307
Kind Code:
A1
Abstract:
The present invention provides a micro light-emitting diode, comprising an active layer and a P-type layer, the active layer comprising a quantum well structure having five or less periods. The micro light-emitting diode further comprises a transition layer. The transition layer is at least sequentially composed of a first transition layer, a second transition layer, and a third transition layer. The thickness of a single-period well layer is not larger than 25 angstroms. The aluminum content of a third barrier layer is 1.2-3 times the aluminum content of a quantum well barrier layer. The sum of the number of periods of the third barrier ranges from 5 to 15 pairs. A hole injection layer is arranged between the active layer and the P-type layer. The hole injection layer is separately connected to the P-type layer and the active layer. The aluminum content of the hole injection layer is not greater than the aluminum content of the barrier layer. The photoelectric conversion efficiency of the small-size micro light-emitting diode is improved.
Inventors:
LAI CHAOHSU (CN)
CHANG CHUNG -YING (CN)
LIU HSIN-YU (CN)
CHANG CHUNG -YING (CN)
LIU HSIN-YU (CN)
Application Number:
PCT/CN2023/072902
Publication Date:
August 03, 2023
Filing Date:
January 18, 2023
Export Citation:
Assignee:
XIAMEN SANAN OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L33/06; H01L33/14; H01L33/32
Foreign References:
| CN114497301A | 2022-05-13 | |||
| CN106571416A | 2017-04-19 | |||
| CN111326618A | 2020-06-23 | |||
| US20210074875A1 | 2021-03-11 |
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