Title:
MICROWAVE ANNEALING AND MODIFICATION METHOD FOR GALLIUM OXIDE MATERIAL
Document Type and Number:
WIPO Patent Application WO/2022/141356
Kind Code:
A1
Abstract:
The present invention relates to a microwave annealing and modification method for a gallium oxide material. The microwave annealing and modification method for a gallium oxide material comprises the following steps: providing a substrate, wherein there is a gallium oxide layer on a surface of the substrate; and performing, at a preset temperature, a microwave annealing treatment on the gallium oxide layer, wherein the preset temperature is lower than a diffusion temperature, and the diffusion temperature is the lowest temperature at which thermal diffusion occurs between a gallium oxide material in the gallium oxide layer and the substrate. By means of the present invention, the problem of thermal diffusion being prone to occurring between a gallium oxide layer and a substrate in an annealing process due to an over-high annealing temperature within an existing conventional annealing manner is prevented; and microwave annealing has low cost, thereby reducing the annealing treatment cost of a gallium oxide material and facilitating large-scale quantitative production.
Inventors:
MA HONGPING (CN)
HOU XINLAN (CN)
HOU XINLAN (CN)
Application Number:
PCT/CN2020/141978
Publication Date:
July 07, 2022
Filing Date:
December 31, 2020
Export Citation:
Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
H01L21/477; H01L21/02
Domestic Patent References:
| WO2011007682A1 | 2011-01-20 |
Foreign References:
| CN109545657A | 2019-03-29 | |||
| US20160027955A1 | 2016-01-28 | |||
| CN110379857A | 2019-10-25 | |||
| CN101454875A | 2009-06-10 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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