Title:
MOSFET AND POWER CONVERSION CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2018/051512
Kind Code:
A1
Abstract:
The present invention provides a MOSFET used in a power conversion circuit provided with a reactor, a power supply, a MOSFET 100, and a rectification element. The MOSFET 100 comprises a semiconductor base member 110 including an n-type column area 114 and a p-type column area 116, the n-type column area 114 and the p-type column area 116 configuring a super junction structure. The n-type column area 114 and the p-type column area 116 are formed such that the p-type column area 116 has an impurity total amount greater than an impurity total amount of the n-type column area 114. When turned on, the MOSFET operates such that at the center of the n-type column area 114 as viewed in plan, a low electric field area appears in which the electric field intensity is lower than in the areas other than the center of the n-type column area 114. With the MOSFET of the present invention, it becomes possible to make oscillations less likely to occur in the MOSFET when the MOSFET is turned on, and to reduce a surge voltage across the rectification element.
Inventors:
ARAI DAISUKE (JP)
HISADA SHIGERU (JP)
KITADA MIZUE (JP)
ASADA TAKESHI (JP)
HISADA SHIGERU (JP)
KITADA MIZUE (JP)
ASADA TAKESHI (JP)
Application Number:
PCT/JP2016/077568
Publication Date:
March 22, 2018
Filing Date:
September 16, 2016
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L29/78; H01L29/06
Foreign References:
| JP2011238824A | 2011-11-24 | |||
| JP2010251571A | 2010-11-04 | |||
| JP2012164707A | 2012-08-30 |
Attorney, Agent or Firm:
MATSUO, Nobutaka (JP)
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