MQW LASER STRUCTURE COMPRISING PLURAL MQW REGIONS

WIPO Patent Application WO/2010/077810

A3

Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.

JP4627132	Semiconductor laser device and optical disk recording / playback device
JP2003515938	INDUSTRIAL APPLICABILITY: Mode-selective facet layer for pump laser
JPS5856992	[Title of the Invention] Semiconductor laser device

BHAT RAJARAM (US)
NAPIERALA JEROME (US)
SIZOV DMITRY (US)
ZAH CHUNG-EN (US)

PCT/US2009/067853

March 31, 2011

December 14, 2009

Click for automatic bibliography generation  

CORNING INC (US)
BHAT RAJARAM (US)
NAPIERALA JEROME (US)
SIZOV DMITRY (US)
ZAH CHUNG-EN (US)

H01S5/20; H01S5/34

US4882734A	1989-11-21
US20080112452A1	2008-05-15
EP1914813A2	2008-04-23
JPH10242512A	1998-09-11
US6570179B1	2003-05-27
EP0361603A2	1990-04-04
US20030231683A1	2003-12-18

HOFSTETTER D ET AL: "EXCITATION OF A HIGHER ORDER TRANSVERSE MODE IN AN OPTICALLY PUMPED INO.15GA0.85N/IN0.05GA0.95N MULTIQUANTUM WELL LASER STRUCTURE", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 70, no. 13, 31 March 1997 (1997-03-31), pages 1650 - 1652, XP000689454, ISSN: 0003-6951, DOI: DOI:10.1063/1.118659

SCOTT, Steven, J (Intellectual Property DepartmentSP-TI-3-, Corning NY, US)

View/Download PDF      PDF Help

Previous Patent: COPOLYESTERS WITH ENHANCED TEAR STRENGTH

Next Patent: BLENDED FLUOROSILICONE RELEASE MATERIALS