MULTI-JUNCTION PHOTOELECTRIC CONVERSION DEVICE AND PHOTOELECTRIC CONVERSION MODULE

WIPO Patent Application WO/2017/057646

A1

This multi-junction photoelectric conversion device (110) sequentially comprises, from the light receiving surface side, a first photoelectric conversion unit (1), an intermediate layer (3) and a second photoelectric conversion unit (2). The first photoelectric conversion unit comprises, as a light absorption layer (11), a photosensitive material having a perovskite crystal structure, and has a first charge transport layer (12) on the light receiving surface side of the light absorption layer, while having a second charge transport layer (13) on the back surface side of the light absorption layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit comprises, as a light absorption layer (21), a crystalline silicon substrate, and has a first conductivity-type semiconductor layer (23a) that is in contact with the intermediate layer. The refractive index n1 of the second charge transport layer (13), the refractive index n2 of the first conductivity-type semiconductor layer (23a) and the average refractive index n of the intermediate layer (3) satisfy n1 < n < n2, (n2 - n1) ≥ 0.7 and √(n1 × n2) - 0.5 ≤ n ≤ √(n1 × n2) + 0.5.

UZU HISASHI (JP)
HINO MASASHI (JP)
ICHIKAWA MITSURU (JP)
MISHIMA RYOTA (JP)
MEGURO TOMOMI (JP)
YAMAMOTO KENJI (JP)

PCT/JP2016/078953

April 06, 2017

September 29, 2016

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KANEKA CORP (JP)

H01L51/44; H01L31/0725

WO2014045021A1

2014-03-27

JP2005057251A	2005-03-03
JP2011249645A	2011-12-08
JP2011181608A	2011-09-15
JP2009533878A	2009-09-17
JP2012529760A	2012-11-22

See also references of EP 3358637A4

SHINTAKU, Masato et al. (JP)

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