Title:
MULTILAYER REFLECTIVE FILM-EQUIPPED SUBSTRATE, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/200325
Kind Code:
A1
Abstract:
The present invention provides a multilayer reflective film-equipped substrate, a reflective mask blank, a reflective mask, and a method for producing a semiconductor device, the multilayer reflective film-equipped substrate having high tolerance for etching gas used for etching of an absorber film and/or an etching mask film, and capable of suppressing occurrence of blisters. A multilayer reflective film-equipped substrate 100 comprises a substrate 10, a multilayer reflective film 12 provided on the substrate 10, and a protective film 14 provided on the multilayer reflective film 12. The protective film 14 contains at least one additional element selected from ruthenium (Ru), rhodium (Rh), titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf).
Inventors:
SUZUKI KOTA (JP)
NAKAGAWA MASANORI (JP)
ONOUE TAKAHIRO (JP)
NAKAGAWA MASANORI (JP)
ONOUE TAKAHIRO (JP)
Application Number:
PCT/JP2021/011620
Publication Date:
October 07, 2021
Filing Date:
March 22, 2021
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24
Domestic Patent References:
| WO2015037564A1 | 2015-03-19 | |||
| WO2015012151A1 | 2015-01-29 |
Foreign References:
| JP2016033956A | 2016-03-10 | |||
| JP2014170931A | 2014-09-18 | |||
| JP2006332153A | 2006-12-07 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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