Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/200324
Kind Code:
A1
Abstract:
This semiconductor device includes: a semiconductor layer having a first surface and a second surface; an element structure which is formed on the first surface side of the semiconductor layer, and which includes a first region of a first electroconductivity type and a second region of a second electroconductivity type contacting the first region; a gate electrode opposing the second region via a gate insulating film; a third region of the first electroconductivity type formed on the semiconductor layer so as to contact the second region; and a first electrode which is formed on the semiconductor layer and is electrically connected to the first region and the second region. The element structure includes a first element structure and a second element structure. The first element structure further includes a first column layer of the second electroconductivity type which is separated from the second region in a direction along the first surface of the semiconductor layer, and which extends in the thickness direction of the semiconductor layer. The second element structure further includes a second electrode which opposes the third region via an insulating film and which is electrically connected to the first electrode.
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Inventors:
KUBO YUSUKE (JP)
Application Number:
PCT/JP2021/011608
Publication Date:
October 07, 2021
Filing Date:
March 22, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/265; H01L21/322; H01L21/336; H01L29/06; H01L29/12; H01L29/739; H01L29/861; H01L29/868
Foreign References:
| JP2013243399A | 2013-12-05 | |||
| JP2017059667A | 2017-03-23 | |||
| JP2018107477A | 2018-07-05 | |||
| JP2013062343A | 2013-04-04 | |||
| JP2017183419A | 2017-10-05 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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