NATURALLY OXIDIZED FILM REMOVING METHOD AND NATURALLY OXIDIZED FILM REMOVING DEVICE

WIPO Patent Application WO/2017/010194

A1

The purpose of the present invention is to provide a technology that can remove a naturally oxidized film formed on the surface of a semiconductor layer containing, as a main component, a compound of indium and an element other than indium, without relatively highly raising the temperature of the semiconductor layer. The present invention is characterized by comprising: a first step for feeding the semiconductor layer with a first etching gas which is a β-diketone and simultaneously heating the semiconductor layer, in order to remove an oxide of indium forming the naturally oxidized film; and a second step for feeding the semiconductor layer with a second etching gas and simultaneously heating the semiconductor layer, in order to remove an oxide of the element other than indium forming the naturally oxidized film. Since an oxide of indium can be removed even when the temperature of the semiconductor layer is relatively low by using the first etching gas, it is unnecessary to relatively highly raise the temperature of the semiconductor layer when removing the naturally oxidized film.

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LIN JUN (JP)
TAKEYA KOJI (JP)
KAWAGUCHI SHINICHI (JP)
TACHIBANA MITSUHIRO (JP)
YAO AKIFUMI (JP)
YAMAUCHI KUNIHIRO (JP)

PCT/JP2016/066885

January 19, 2017

June 07, 2016

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TOKYO ELECTRON LTD (JP)
CENTRAL GLASS CO LTD (JP)

H01L21/3065; H01L21/302; H01L21/304

JP2004536448A	2004-12-02
JP2000503805A	2000-03-28
JPH1140546A	1999-02-12
JP2006501651A	2006-01-12

INOUE, Toshio et al. (JP)

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