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Title:
NEAR-INFRARED PHOTOTHERMAL ACTIVATION DELAYED FLUORESCENT MATERIAL AND PREPARATION METHOD THEREFOR, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/082600
Kind Code:
A1
Abstract:
The present invention provides a near-infrared photothermal activation delayed fluorescent material and a preparation method therefor, and a display device. The molecular structure of the near-infrared photothermal activation delayed fluorescent material is a D-A-D structure or a D-A structure generated by a reaction between an electron donor (D) and an electron acceptor (A). The electron acceptor (A) is a planar electron acceptor (A) having a triplet energy level ranging from 1.30 to 1.80. The preparation method comprises a step of synthesizing a target, a step of extracting a target, and a step of purifying a target. The process is simple, purification is easy, and yield is high. The display device is provided with a light-emitting layer, and the light-emitting layer comprises the near-infrared photothermal activation delayed fluorescent material, so that the fluorescence efficiency is high and the stability is good. Therefore, the luminous efficiency of the display device is also improved and the service life is prolonged.

Inventors:
LUO JIAJIA (CN)
Application Number:
PCT/CN2018/125218
Publication Date:
April 30, 2020
Filing Date:
December 29, 2018
Export Citation:
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Assignee:
WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
C07D487/04; C09K11/06; H01L51/50; H01L51/54
Foreign References:
CN108047228A2018-05-18
CN107602540A2018-01-19
CN108409720A2018-08-17
CN108358908A2018-08-03
US20180155617A12018-06-07
Other References:
XUE, JIE ET AL.: "High-Efficiency Near-Infrared Fluorescent Organic Light-Emitting Diodes with Small Efficiency Roll-Off: A Combined Design from Emitters to Devices", ADV. FUNCT. MATER., vol. 27, no. 45, 9 October 2017 (2017-10-09), ISSN: 1616-3028
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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