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Title:
NEGATIVE CHARGE PUMP WITH BULK BIASING
Document Type and Number:
WIPO Patent Application WO2004027996
Kind Code:
A3
Abstract:
An n-channel MOS transistor negative-voltage charge pump is disclosed in which the bulks of the n-channel MOS transistors (26, 28) are biased in such a manner as to prevent turning on the parasitic bipolar transistor inherent in the CMOS environment of the charge pump structure.

Inventors:
ODDONE GIORGIO
FRULIO MASSIMILIANO
FIGINI LUCA
TASSAN CASER FABIO
Application Number:
PCT/US2003/030011
Publication Date:
May 21, 2004
Filing Date:
September 18, 2003
Export Citation:
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Assignee:
ATMEL CORP (US)
International Classes:
H02M3/07; (IPC1-7): G05F1/10; H02M3/18
Foreign References:
US6130572A2000-10-10
US5754476A1998-05-19
US6373324B22002-04-16
US6452438B12002-09-17
US6605985B22003-08-12
Other References:
See also references of EP 1550017A4
Download PDF:
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