NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

WIPO Patent Application WO/2014/057906

A1

A nitride semiconductor device includes the following: an electron transit layer (103) comprising a nitride semiconductor; an electron supply layer (104) that is formed on top of the electron transit layer (103), comprises a nitride semiconductor having a composition different from that of the electron transit layer (103), and has a recess (109) extending from the surface thereof to the electron transit layer (103); a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) that is exposed inside of the recess (109); a gate insulating film (110) that is embedded in the recess (109) so as to come into contact with the thermal oxide film (111); a gate electrode (108) that is formed on top of the gate insulating film (110) and faces the electron transit layer (103) with the thermal oxide film (111) and the gate insulating film (110) interposed therebetween; and a source electrode (106) and a drain electrode (107) disposed, with a gap therebetween, on top of the electron supply layer (104) so as to sandwich the gate electrode (108).

YAMAMOTO KENJI (JP)
FUJIWARA TETSUYA (JP)
AKUTSU MINORU (JP)
NAKAHARA KEN (JP)
ITO NORIKAZU (JP)

PCT/JP2013/077233

April 17, 2014

October 07, 2013

Click for automatic bibliography generation  

ROHM CO LTD (JP)

H01L21/338; H01L21/28; H01L21/283; H01L21/3065; H01L21/316; H01L21/336; H01L29/423; H01L29/49; H01L29/778; H01L29/78; H01L29/786; H01L29/812

JP2012156245A	2012-08-16
JP2012174875A	2012-09-10
JP2010010584A	2010-01-14
JP2011171440A	2011-09-01
JP2011187643A	2011-09-22
JP2012009594A	2012-01-12
JP2010278333A	2010-12-09

INAOKA, Kosaku et al. (JP)
Kosaku Inaoka (JP)

View/Download PDF      PDF Help

Previous Patent: NON-CONTACT POWER SUPPLY APPARATUS

Next Patent: SIMPLE MEASUREMENT TOOL