Title:
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/180021
Kind Code:
A1
Abstract:
[Problem] The present invention addresses the problem of achieving a nitride semiconductor device wherein short channel effects are sufficiently suppressed. [Solution] Disclosed is an InAlGaN/GaN∙HEMT wherein a nitride semiconductor laminated structure 2 is provided with: a buffer layer 2a; an InGaN-containing back barrier layer 2b that is provided on the buffer layer 2a; and an electron transit layer 2c that is provided on the back barrier layer 2b. In the thickness direction of the back barrier layer 2b, In composition in the back barrier layer increases at a first interface to the buffer layer 2a, and the In composition continuously reduces toward a second interface to the electron transit layer 2c from the first interface.
Inventors:
MAKIYAMA KOZO (JP)
Application Number:
PCT/JP2018/006034
Publication Date:
October 04, 2018
Filing Date:
February 20, 2018
Export Citation:
Assignee:
FUJITSU LTD (JP)
International Classes:
H01L21/338; H01L29/778; H01L29/812
Foreign References:
| JP2006222191A | 2006-08-24 | |||
| JP2005086102A | 2005-03-31 | |||
| JP2015135946A | 2015-07-27 | |||
| JP2013211481A | 2013-10-10 | |||
| JP2016213507A | 2016-12-15 | |||
| JP2008252034A | 2008-10-16 | |||
| JP2008016588A | 2008-01-24 | |||
| JP2006196557A | 2006-07-27 | |||
| JP2013171854A | 2013-09-02 |
Attorney, Agent or Firm:
MUKOUYAMA, Naoki (JP)
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