NITRIDE SEMICONDUCTOR DEVICE AND SUBSTRATE THEREOF, METHOD OF FORMING RARE EARTH ELEMENT-ADDED NITRIDE LAYER, AND RED LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME

Title:

NITRIDE SEMICONDUCTOR DEVICE AND SUBSTRATE THEREOF, METHOD OF FORMING RARE EARTH ELEMENT-ADDED NITRIDE LAYER, AND RED LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2020/050159

Kind Code:

A1

Abstract:

The purpose of the present invention is to provide a technique of manufacturing a nitride semiconductor layer with which, when producing a semiconductor device by forming a nitride semiconductor layer on a substrate inclined at an off angle, it is possible to stably supply high-quality semiconductor devices by preventing generation of macrosteps using a material that is not likely to generate lattice strains or crystal defects by intermixing with GaN and does not require continuous addition. Provided is a nitride semiconductor device which comprises a nitride semiconductor layer formed on a substrate, wherein the substrate is inclined at an off angle, a rare earth element-added nitride layer to which a rare earth element is added is formed on the substrate as a primed layer, and a nitride semiconductor layer is formed on the rare earth element-added nitride layer.

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Inventors:

ICHIKAWA SHUHEI (JP)
FUJIWARA YASUFUMI (JP)
TATEBAYASHI JUN (JP)

Application Number:

PCT/JP2019/034070

Publication Date:

March 12, 2020

Filing Date:

August 30, 2019

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Assignee:

UNIV OSAKA (JP)

International Classes:

H01L29/207; C30B25/16; C30B29/38; H01L21/20; H01L21/205; H01L21/338; H01L29/20; H01L29/778; H01L29/812

Domestic Patent References:

WO2018097102A1

2018-05-31

Foreign References:

US20100320443A1	2010-12-23
JP2016088803A	2016-05-23
JP2008308349A	2008-12-25
JP2014175482A	2014-09-22
JP2004335635A	2004-11-25

Other References:

C. K. SHU ET AL.: "Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition", APPL. PHYS. LETT., vol. 73, 1998, pages 641, XP000778942, DOI: 10.1063/1.121933
See also references of EP 3848975A4

Attorney, Agent or Firm:

JODAI Tetsuji et al. (JP)

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