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Title:
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/175697
Kind Code:
A1
Abstract:
A semiconductor light emitting device (300) has: a nitride semiconductor light emitting element (310), which has a nitride semiconductor multilayer film laminated on a nitride semiconductor substrate (201) that has a polar surface or a semipolar surface as the surface; and a mounting section (311) having the element mounted thereon. The nitride semiconductor multilayer film includes an electron block layer (204). The electron block layer has a lattice constant smaller than that of the nitride semiconductor substrate. The mounting section has at least a first mounting section base material (311a). The first mounting section base material is positioned on the side where the nitride semiconductor light emitting element is to be mounted. The first mounting section base material has a thermal expansion coefficient smaller than that of the nitride semiconductor multilayer film. The first mounting section base material has thermal conductivity higher than that of the nitride semiconductor multilayer film.

Inventors:
SAMONJI KATSUYA
YAMANAKA KAZUHIKO
YOSHIDA SHINJI
HAGINO HIROYUKI
Application Number:
PCT/JP2013/002346
Publication Date:
November 28, 2013
Filing Date:
April 04, 2013
Export Citation:
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Assignee:
PANASONIC CORP (JP)
International Classes:
H01S5/022; H01L33/32; H01L33/48; H01S5/343
Domestic Patent References:
WO2007083647A12007-07-26
WO2010131527A12010-11-18
WO2008018482A12008-02-14
Foreign References:
JPH0513843A1993-01-22
JP2010272593A2010-12-02
JP2007005473A2007-01-11
JP2004186527A2004-07-02
JP2003309316A2003-10-31
JP2002329896A2002-11-15
JP2002299744A2002-10-11
JPH10215022A1998-08-11
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
Patent business corporation MAEDA PATENT OFFICE (JP)
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