Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
NITRIDE SEMICONDUCTOR STRUCTURE, LAMINATE STRUCTURE, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/054284
Kind Code:
A1
Abstract:
A nitride semiconductor structure having an m surface as a primary surface, wherein the structure is provided with a plurality of crystal-growth seed regions (130) comprising a nitride semiconductor extending at an angle in a range of 0-10° in relation to an a-axis, and a horizontal-direction growth region (320b) comprising a nitride semiconductor spread in the c-axis direction from each of the plurality of crystal-growth seed regions, the interval (S width) between adjacent crystal-growth seed regions being at least 20 µm.

More Like This:
JPS58155722MANUFACTURE OF INORGANIC THIN FILM
JP2008021732METHOD AND SYSTEM FOR IDENTIFYING CAUSE OF ABNORMALITY IN PRESSURE, VACUUM PROCESSING DEVICE, AND RECORDING MEDIUM
JP2004352537SUBSTRATE FOR GROWING SINGLE CRYSTAL DIAMOND THIN FILM, AND MANUFACTURING METHOD THEREFOR
Inventors:
CHOE SONGBAEK
YOSHIDA SHUNJI
YOKOGAWA TOSHIYA
Application Number:
PCT/JP2013/005887
Publication Date:
April 10, 2014
Filing Date:
October 02, 2013
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
PANASONIC CORP (JP)
International Classes:
H01L21/205; C23C16/34; C30B25/02; C30B29/38; H01L21/02; H01L21/20
Domestic Patent References:
WO2011083551A12011-07-14
WO2010029720A12010-03-18
Foreign References:
JP2007184503A2007-07-19
JP2010512301A2010-04-22
Other References:
A. HIRAI ET AL.: "Formation and reduction of pyramidal hillocks on m-plane {1-100} GaN", APPLIED PHYSICS LETTERS, vol. 91, no. 19, 8 November 2007 (2007-11-08), pages 191906-1 - 191906-3
Attorney, Agent or Firm:
OKUDA, SEIJI (JP)
Seiji Okuda (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: CODING METHOD, DECODING METHOD, CODER, AND DECODER

Next Patent: METHOD FOR SIGNALING A STEP-WISE TEMPORAL SUB-LAYER ACCESS SAMPLE