Title:
NITRIDE SEMICONDUCTOR SUBSTRATE, LAMINATED STRUCTURE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/158571
Kind Code:
A1
Abstract:
A nitride semiconductor substrate that is constituted by monocrystals of a group III nitride semiconductor and has a main surface in which the nearest low-index crystal plane is the (0001) plane, the substrate having an oblique interface growth region grown on an oblique interface outside the (0001) plane, wherein: the areal proportion, of the main surface, occupied by the oblique interface growth region is 80% or more; there is no region of the main surface where the dislocation density exceeds 3 × 106 cm–2 when the dislocation density is measured on the basis of dark spot density via observation of the main surface at a 250 μm angle of view using a multiphoton excitation microscope; and the main surface has non-overlapping 50 μm-angle dislocation-free regions at a density of 100/cm2 or greater.
Inventors:
YOSHIDA TAKEHIRO (JP)
Application Number:
PCT/JP2020/002333
Publication Date:
August 06, 2020
Filing Date:
January 23, 2020
Export Citation:
Assignee:
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
SUMITOMO CHEMICAL CO (JP)
International Classes:
C30B29/38; C30B25/18
Foreign References:
| JP2001102307A | 2001-04-13 | |||
| JP2003165799A | 2003-06-10 | |||
| JP6595731B1 | 2019-10-23 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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