Title:
NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/013729
Kind Code:
A1
Abstract:
This nitride semiconductor ultraviolet light-emitting element is provided with: an underlayer portion including a substrate comprising sapphire having a surface which is inclined with respect to the (0001) plane in order to form multistep terraces, and an AlN layer formed on the surface of the substrate; and a light-emitting portion which is formed on a surface of the underlayer portion and which includes an active layer including an AlGaN-based semiconductor layer. At least the AlN layer of the underlayer portion, the active layer of the light-emitting portion, and layers therebetween are formed by step-flow growth whereby two-dimensional growth is achieved through the growth of side walls of the multistep terraces. The active layer has a quantum well structure including at least one well layer made of AlGaN. On the surface of the active layer, the average roughness in a 25-μm square region is not less than the thickness of the well layer and not more than 10 nm.
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Inventors:
KANEDA MICHIKO (JP)
PERNOT CYRIL (JP)
HIRANO AKIRA (JP)
PERNOT CYRIL (JP)
HIRANO AKIRA (JP)
Application Number:
PCT/JP2015/070656
Publication Date:
January 26, 2017
Filing Date:
July 21, 2015
Export Citation:
Assignee:
SOKO KAGAKU CO LTD (JP)
International Classes:
H01L33/16; H01L33/32
Domestic Patent References:
| WO2013021464A1 | 2013-02-14 |
Foreign References:
| JP2004335635A | 2004-11-25 | |||
| JP2006060164A | 2006-03-02 |
Other References:
XU-QIANG SHEN ET AL.: "Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy", JPN. J. APPL. PHYS., vol. 42, no. 11A, 1 November 2003 (2003-11-01), pages L1293 - L1295, XP001191871
NORITOSHI MAEDA ET AL.: "Chracteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN deep-UV LEDs", IEICE TECHNICAL REPORT, vol. 111, no. 292, 10 November 2011 (2011-11-10), pages 107 - 112, XP009504718
NORITOSHI MAEDA ET AL.: "Chracteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN deep-UV LEDs", IEICE TECHNICAL REPORT, vol. 111, no. 292, 10 November 2011 (2011-11-10), pages 107 - 112, XP009504718
Attorney, Agent or Firm:
MASAKI, Yoshifumi (JP)
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