Title:
NITROGEN-PLASMA SURFACE TREATMENT IN A DIRECT BONDING METHOD
Document Type and Number:
WIPO Patent Application WO/2009/153422
Kind Code:
A8
Abstract:
Two wafers, each having on a surface thereof a thin silicon or silicon oxide film, are bonded by subjecting the thin film of at least one wafer to a surface treatment forming a thin silicon oxynitride surface film with a thickness of less than 5 nm. The thin film is formed by means of a nitrogen-based plasma, generated by an inductively coupled plasma source. In addition, the potential difference between the plasma and a substrate holder supporting said wafer, during the surface treatment, is less than 50 V, advantageously less than 15 V and preferably zero. This makes it possible to obtain a defect-free bonding interface irrespective of the temperature of any heat treatment carried out after the contacting step.
Inventors:
LIBRALESSO LAURE (FR)
MORICEAU HUBERT (FR)
MORALES CHRISTOPHE (FR)
RIEUTORD FRANCOIS (FR)
VENTOSA CAROLINE (FR)
CHEVOLLEAU THIERRY (FR)
MORICEAU HUBERT (FR)
MORALES CHRISTOPHE (FR)
RIEUTORD FRANCOIS (FR)
VENTOSA CAROLINE (FR)
CHEVOLLEAU THIERRY (FR)
Application Number:
PCT/FR2009/000502
Publication Date:
December 23, 2010
Filing Date:
April 28, 2009
Export Citation:
Assignee:
COMMISSARIAT ENERGIE ATOMIQUE (FR)
LIBRALESSO LAURE (FR)
MORICEAU HUBERT (FR)
MORALES CHRISTOPHE (FR)
RIEUTORD FRANCOIS (FR)
VENTOSA CAROLINE (FR)
CHEVOLLEAU THIERRY (FR)
LIBRALESSO LAURE (FR)
MORICEAU HUBERT (FR)
MORALES CHRISTOPHE (FR)
RIEUTORD FRANCOIS (FR)
VENTOSA CAROLINE (FR)
CHEVOLLEAU THIERRY (FR)
International Classes:
H01L21/762
Attorney, Agent or Firm:
HECKE, Gérard (10 rue d'Arménie - Europol, BP 1537 Grenoble Cedex 1, FR)
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