Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2020/179006
Kind Code:
A1
Abstract:
A nonvolatile semiconductor storage device according to an embodiment of the present invention is provided with: a plurality of first wiring layers that extend in a first direction and that are aligned along a second direction intersecting the first direction; a plurality of second wiring layers that are provided above the plurality of first wiring layers in a third direction intersecting the first direction and the second direction and that are aligned along the first direction and extend in the second direction; a plurality of first laminated structures including, at intersections of the plurality of second wiring layers and the plurality of first wiring layers, memory cells disposed between the second wiring layers and the first wiring layers; second laminated structures that are adjacent to the plurality of first wiring layers in the second direction and that are aligned along the second direction and contact the second wiring layers; and an insulating layer provided between the plurality of first laminated structures and between a plurality of the second laminated structures. Each of the second laminated structures has a higher Young's modulus than the insulating layer. Provided are: a highly-reliable nonvolatile semiconductor storage device that has excellent mechanical strength and high resistance to pattern short-circuiting and thus improves yields; and a method for manufacturing the same.
Inventors:
NODA KOTARO (JP)
Application Number:
PCT/JP2019/008821
Publication Date:
September 10, 2020
Filing Date:
March 06, 2019
Export Citation:
Assignee:
KIOXIA CORP (JP)
International Classes:
H01L21/8239; H01L27/105; H01L45/00
Foreign References:
| US20140239246A1 | 2014-08-28 | |||
| JP2013062380A | 2013-04-04 | |||
| JP2016219811A | 2016-12-22 |
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
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