Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2008/068991
Kind Code:
A1
Abstract:
Provided is a nonvolatile semiconductor memory device capable of executing rewriting
operations of different resistance changes individually and simultaneously for
a plurality of memory cells having variable resistance elements changed in resistance
characteristics by voltage applications. The nonvolatile semiconductor memory
device is provided, for every bit lines (BL0 to BL3) connected commonly with the
memory cells of the same column, with load resistance characteristic varying
circuits (14), which are so constituted as to select either of two load resistance
characteristics individually according to a first rewriting operation for
causing the resistance characteristics of the rewriting target variable resistance
elements to transit from a low resistance state to a high resistance state, and
a second rewriting operation for causing the transition from a high resistance
state to a low resistance state. Further provided are rewriting voltage pulse
applying circuits (13a) for applying first voltage pulses to be applied in the
first rewriting operation and second voltage pulses to be applied in the second
rewriting operation, through the load resistance characteristic varying circuits
(14) and the bit lines (BL0 to BL3) to the rewriting target memory cells.
Inventors:
INOUE KOHJI
HOSOI YASUNARI
OHNISHI SHIGEO
AWAYA NOBUYOSHI
HOSOI YASUNARI
OHNISHI SHIGEO
AWAYA NOBUYOSHI
Application Number:
PCT/JP2007/071501
Publication Date:
June 12, 2008
Filing Date:
November 05, 2007
Export Citation:
Assignee:
SHARP KK (JP)
INOUE KOHJI
HOSOI YASUNARI
OHNISHI SHIGEO
AWAYA NOBUYOSHI
INOUE KOHJI
HOSOI YASUNARI
OHNISHI SHIGEO
AWAYA NOBUYOSHI
International Classes:
G11C13/00; H01L27/10; H01L45/00; H01L49/00
Foreign References:
| JP2006099882A | 2006-04-13 | |||
| JP2006203098A | 2006-08-03 | |||
| JP2006190376A | 2006-07-20 |
Attorney, Agent or Firm:
MASAKI, Yoshifumi (3-6 Imabashi 4-chome,Chuo-ku, Osaka-shi, Osaka 42, JP)
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