Title:
NONVOLATILE STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/238691
Kind Code:
A1
Abstract:
This nonvolatile storage device comprises a plurality of nonvolatile storage elements, wherein: the nonvolatile storage elements each comprise a semiconductor layer including a metal oxide, a gate electrode facing the semiconductor layer, and a gate insulating layer formed of antiferroelectrics and provided between the semiconductor layer and the gate electrode, and the electron affinity of a first material constituting the gate electrode is smaller than that of a second material constituting the semiconductor layer, and the second material is an n-type semiconductor; or the electron affinity of the first material constituting the gate electrode is greater than that of the second material constituting the semiconductor layer, and the second material is a p-type semiconductor.
Inventors:
KOBAYASHI MASAHARU (JP)
LI ZHUO (JP)
HIRAMOTO TOSHIRO (JP)
LI ZHUO (JP)
HIRAMOTO TOSHIRO (JP)
Application Number:
PCT/JP2023/019580
Publication Date:
December 14, 2023
Filing Date:
May 25, 2023
Export Citation:
Assignee:
JAPAN SCIENCE & TECH AGENCY (JP)
International Classes:
H10B51/30; H01L21/336; H01L29/78; H01L29/786; H01L29/788; H01L29/792
Foreign References:
| CN114141880A | 2022-03-04 | |||
| US20200091274A1 | 2020-03-19 | |||
| JP2020031213A | 2020-02-27 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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