Title:
ORGANIC SEMICONDUCTOR ELEMENT, STRAIN GAUGE, MEASUREMENT DEVICE, AND PRODUCTION METHOD FOR ORGANIC SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2024/043005
Kind Code:
A1
Abstract:
Provided are an organic semiconductor element, a strain gauge, a measurement device, and a method for producing an organic semiconductor element which facilitate high-precision measurement of strain. An element part 12 of a strain gauge is provided with an organic semiconductor film 21, a dopant layer 22, a protective layer 23, and a coating 24 which are laminated on a substrate 11. A dope layer 28 is formed with the dopant of the dopant layer 22, at the interface between the dopant layer 22 and the organic semiconductor film 21. The coating 24 is formed so as to cover the dopant layer 22 on a surface of the organic semiconductor film 21, and suppresses the entry of light to the organic semiconductor film 21 and the dopant layer 22 and the permeation of water to the dopant layer 22.
Inventors:
YAMASHITA YU (JP)
WATANABE SHUNICHIRO (JP)
TAKEYA JUNICHI (JP)
NOZAWA HAN (JP)
TSURUMI JUNTO (JP)
WATANABE SHUNICHIRO (JP)
TAKEYA JUNICHI (JP)
NOZAWA HAN (JP)
TSURUMI JUNTO (JP)
Application Number:
PCT/JP2023/027815
Publication Date:
February 29, 2024
Filing Date:
July 28, 2023
Export Citation:
Assignee:
UNIV TOKYO (JP)
PI CRYSTAL INC (JP)
PI CRYSTAL INC (JP)
International Classes:
G01L1/18
Domestic Patent References:
| WO2020050288A1 | 2020-03-12 | |||
| WO2014050534A1 | 2014-04-03 |
Foreign References:
| JP2016001689A | 2016-01-07 | |||
| JP2019534473A | 2019-11-28 | |||
| JP2017083418A | 2017-05-18 | |||
| US20200256748A1 | 2020-08-13 |
Attorney, Agent or Firm:
DORAIT IP LAW FIRM (JP)
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