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Title:
OVERHEAT DETECTION OF MOSFET
Document Type and Number:
WIPO Patent Application WO/2021/119989
Kind Code:
A1
Abstract:
There is provided a circuit (10) for detecting junction temperature of a MOSFET (12). The circuit (10) comprises a MOSFET (12), a sense resistor (Rs) connected in series to drain or source of the MOSFET (12), an amplifier (14) for amplifying a voltage (Vr) across the sense resistor (Rs) by a predetermined value (K), and a comparator (16) for comparing the the amplified voltage (KVr) with a drain voltage (Vds) of the MOSFET (12).

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Inventors:
LIU WEI (CN)
Application Number:
PCT/CN2019/125932
Publication Date:
June 24, 2021
Filing Date:
December 17, 2019
Export Citation:
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Assignee:
TECHTRONIC CORDLESS GP (US)
LIU WEI (CN)
International Classes:
G01K7/01; G01R31/26
Foreign References:
CN209542769U2019-10-25
CN109061375A2018-12-21
US5796290A1998-08-18
US7359172B22008-04-15
US20170317669A12017-11-02
JP6007578B22016-10-12
US4896245A1990-01-23
US7359172B22008-04-15
US6998899B22006-02-14
Other References:
See also references of EP 4078122A4
Attorney, Agent or Firm:
RUNPING & PARTNERS (CN)
Download PDF:
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