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Title:
OXIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/155034
Kind Code:
A1
Abstract:
Provided are: an oxide semiconductor device capable of providing a p-type semiconductor in an oxide semiconductor and having excellent transparency, mobility, and weather resistance; and a semiconductor device comprising said oxide semiconductor. This oxide semiconductor has a crystal structure including a fordite structure, comprises a composite oxide including elements Nb and Sn , and has positive holes that serve as charge carriers as a result of Sn4+/(Sn2+ + Sn4+), which is the Sn4+ ratio relative to the total Sn content in the composite oxide, being 0.006 ≤ Sn4+/(Sn2+ + Sn4+) ≤ 0.013.

Inventors:
KIKUCHI NAOTO (JP)
AIURA YOSHIHIRO (JP)
SAMIZO AKANE (JP)
IKEDA SHINTAROU (JP)
Application Number:
PCT/JP2018/001729
Publication Date:
August 30, 2018
Filing Date:
January 22, 2018
Export Citation:
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Assignee:
AIST (JP)
International Classes:
C01G33/00; H01L29/786
Domestic Patent References:
WO2010010802A12010-01-28
Foreign References:
JPS58219703A1983-12-21
JP2004344733A2004-12-09
JP2006088019A2006-04-06
Other References:
KATAYAMA SHOTA ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 416, 2015, pages 126 - 129, XP029176029, ISSN: 0022-0248
CRUZ LUISA PAULA ET AL.: "Pyrochlore-type tin niobate", ACTA CRYSTALLOGRAPHICA SECTION C CRYSTAL STRUCTURE COMMUNICATIONS, vol. 57, no. 9, 15 September 2001 (2001-09-15), pages 1001 - 1003+3p, XP055618834, ISSN: 0108-2701, DOI: 10.1107/S0108270101010320
See also references of EP 3587350A4
P. CERNYA-M. FRANSOLETT. S. ERCITR. CHAPMAN, THE CANADIAN MINERALOGIST, vol. 26, 1988, pages 889 - 903
Y. HOSOGIY. SHIMODAIRAH. KATOH. KOBAYASHIA KUDO, CHEMISTRY OF MATERIALS, vol. 20, 2008, pages 1299
L. P. CRUZJ. -M. SAVARIULTJ. ROCHAJ. -C. JUMASJ. D. PEDROSA, JOURNAL OF SOLID STATE CHEMISTRY, vol. 156, 2001, pages 349
M. A. SUBRAMANIANG. ARAVAMUDANG. V. SUBBA RAO, PROGRESS IN SOLID STATE CHEMISTRY, vol. 15, 1983, pages 55
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
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