Title:
OZONE GAS GENERATION TREATMENT DEVICE, SILICON OXIDE FILM FORMATION METHOD, AND SILICON SINGLE CRYSTAL WAFER EVALUATION METHOD
Document Type and Number:
WIPO Patent Application WO/2013/031084
Kind Code:
A1
Abstract:
The present invention is an ozone gas generation treatment device which comprises an ultraviolet light source and a wafer mounting part, generates ozone gas by applying ultraviolet light from the light source in an oxygen-containing atmosphere, and treats a wafer on the wafer mounting part with the ozone gas, the ozone gas generation treatment device being characterized by comprising a light-blocking plate for passing the generated ozone gas therethrough and blocking the ultraviolet light between the light source and the wafer mounted on the wafer mounting part. Consequently, the ozone gas generation treatment device and a silicon oxide film formation method, by which the thickness of the oxide film formed on the surface of the wafer when the surface of the wafer is treated with the ozone gas can be thinly adjusted and the wafer surface is not damaged by the ultraviolet light, and a silicon single crystal wafer evaluation method by which more stable C-V characteristic measured values than in the prior art can be obtained are provided.
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Inventors:
KUME FUMITAKA (JP)
Application Number:
PCT/JP2012/004732
Publication Date:
March 07, 2013
Filing Date:
July 25, 2012
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
KUME FUMITAKA (JP)
KUME FUMITAKA (JP)
International Classes:
H01L21/66; H01L21/316
Foreign References:
| JP2007158314A | 2007-06-21 |
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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Claims: