Title:
PASSIVE CAVITY TYPE SINGLE CRYSTAL THIN-FILM BULK ACOUSTIC RESONATOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/116396
Kind Code:
A1
Abstract:
The present invention discloses a passive cavity type single crystal thin-film bulk acoustic resonator (FBAR) structure, comprising a support substrate, a bonding adhesion layer, an epitaxial substrate layer, and a single crystal piezoelectric layer that are sequentially provided on the support substrate, and an upper electrode and a lower electrode; partial regions of the bonding adhesion layer and the epitaxial substrate layer are lost, such that a cavity is formed between the support substrate and the single crystal piezoelectric layer; the upper electrode and the lower electrode are respectively located on the upper and lower sides of the single crystal piezoelectric layer away from the support substrate, and the lower electrode is located in the cavity; a first interconnection metal layer covers a part of the single crystal piezoelectric layer and is connected to the lower electrode by means of a through hole in the single crystal piezoelectric layer; and a second interconnection metal layer covers a part of the single crystal piezoelectric layer and a part of an upper electrode layer. According to the present invention, a single crystal piezoelectric material is used as a piezoelectric thin film of an FBAR, such that smaller loss, larger Q value, and higher electromechanical coupling coefficient can be obtained, the performance of the FBAR is greatly improved, and the high-performance application requirements of frequency bands of 5 GHz and above can be met.
Inventors:
DONG SHURONG (CN)
XUAN WEIPENG (CN)
JIN HAO (CN)
LUO JIKUI (CN)
XUAN WEIPENG (CN)
JIN HAO (CN)
LUO JIKUI (CN)
Application Number:
PCT/CN2021/076769
Publication Date:
June 09, 2022
Filing Date:
February 18, 2021
Export Citation:
Assignee:
HAINING BERNSTEIN BIOTECH CO LTD (CN)
International Classes:
H03H9/02; H03H3/02; H03H9/17
Foreign References:
| US20180309422A1 | 2018-10-25 | |||
| CN111245397A | 2020-06-05 | |||
| CN110011632A | 2019-07-12 |
Attorney, Agent or Firm:
HANGZHOU QIUSHI PATENT OFFICE CO., LTD. (CN)
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