Title:
STRUCTURE FOR MONOLITHIC AND HETEROGENEOUS INTEGRATION OF PASSIVE CAVITY-TYPE SINGLE-CRYSTAL FBAR AND ACTIVE GAN HEMT
Document Type and Number:
WIPO Patent Application WO/2022/116395
Kind Code:
A1
Abstract:
The present invention relates to a structure for monolithic and heterogeneous integration of a passive cavity-type single-crystal FBAR and an active GaN HEMT, comprising a support substrate, a bonding adhesion layer, a thinned epitaxial substrate, a GaN HEMT device located on the thinned epitaxial substrate, a cavity-type single-crystal FBAR device located on the support substrate, and an interconnection metal between the FBAR and GaN HEMT devices. In the present invention, the reliability, the power capacity, and the integration level of an integrated chip are improved by a monolithic heterogeneous integration mode, and an ultra-low phase oscillator chip formed by monolithic integration of an FBAR and a GaN HEMT and an amplifier chip formed by monolithic integration of an FBAR filter and a GaN-based power amplifier can be achieved, so as to achieve a monolithic integrated radio frequency front-end chip, thereby improving the reliability, power capacity, integration level, etc. of the radio frequency front-end chip and meeting high-performance application requirements of a 5 GHz frequency band or above.
Inventors:
DONG SHURONG (CN)
XUAN WEIPENG (CN)
JIN HAO (CN)
LUO JIKUI (CN)
XUAN WEIPENG (CN)
JIN HAO (CN)
LUO JIKUI (CN)
Application Number:
PCT/CN2021/076768
Publication Date:
June 09, 2022
Filing Date:
February 18, 2021
Export Citation:
Assignee:
HAINING BERNSTEIN BIOTECH CO LTD (CN)
International Classes:
H01L27/20
Foreign References:
| CN110380702A | 2019-10-25 | |||
| CN111146235A | 2020-05-12 | |||
| EP2653844A1 | 2013-10-23 |
Attorney, Agent or Firm:
HANGZHOU QIUSHI PATENT OFFICE CO., LTD. (CN)
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