PATTERN FORMATION METHOD, ELECTRONIC DEVICE PRODUCTION METHOD, AND PATTERN EXPOSURE DEVICE

WIPO Patent Application WO/2022/065048

A1

The present invention provides a pattern formation method with which it is possible to achieve a pattern dimension or shape within a permissible range for a target value, even if the thickness of an applied resist layer is irregular.　The pattern formation method is for forming a pattern based on a photosensitive layer on a substrate (P) by means of a photolithography process, and includes: an application step for forming a photosensitive layer by applying a photosensitive solution to a two-dimensional application region set on the surface of the base (P); a thickness measurement step for measuring the thickness of the photosensitive layer formed on the application region on the base (P) and producing thickness map information (SS2) for the photosensitive layer; and a data amendment step for amending drawing data on the basis of the thickness map information (SS2), before projecting an exposure beam onto the photosensitive layer to expose the pattern.

KAWABATA SEIJI (JP)
HORI MASAKAZU (JP)
NAITO KAZUO (JP)
KITO YOSHIAKI (JP)
OKUI KOTARO (JP)

PCT/JP2021/033128

March 31, 2022

September 09, 2021

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NIKON CORP (JP)

G03F7/20; G03F7/24; H01L21/677

WO2016035842A1

2016-03-10

JP2008250140A	2008-10-16
JP2000056466A	2000-02-25
JP2001201862A	2001-07-27
JPH0378238A	1991-04-03
JP2014229802A	2014-12-08
JP2015065360A	2015-04-09
JP2003177505A	2003-06-27
JP2005292271A	2005-10-20
JP2001092107A	2001-04-06

CHIBA Yoshihiro et al. (JP)

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