PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE

WIPO Patent Application WO/2014/178391

A1

Provided is a pattern forming method which satisfies high sensitivity, high resolution properties (such as high resolving power) and film thinning reduction performance at the same time at extremely high levels. A pattern forming method which comprises: (1) a step wherein a film is formed using an active light sensitive or radiation sensitive resin composition; (2) a step wherein the film is exposed to active light or radiation; and (3) a step wherein the exposed film is developed using a developer liquid that contains an organic solvent. The active light sensitive or radiation sensitive resin composition contains (A) a resin having a group that is decomposed by the action of an acid and produces a polar group; and the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group that is protected by a group that is cleavable by the action of an acid. In addition, the developer liquid containing an organic solvent contains an additive which forms at least one interaction that is selected from among an ionic bond, a hydrogen bond, a chemical bond and a dipolar interaction together with a polar group.

TAKIZAWA HIROO (JP)
HIRANO SHUJI (JP)
YOKOKAWA NATSUMI (JP)
NIHASHI WATARU (JP)

PCT/JP2014/061929

November 06, 2014

April 30, 2014

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FUJIFILM CORP (JP)

G03F7/038; C08F212/14; C08F220/26; G03F7/004; G03F7/039; G03F7/32; H01L21/027

JP2010217884A	2010-09-30
JP2013076991A	2013-04-25
JP2013011858A	2013-01-17
JP2012032788A	2012-02-16

ODAHARA Shuichi et al. (JP)
Shuichi Odawara (JP)

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