PATTERN FORMING METHOD AND PLASMA PROCESSING METHOD

Title:

PATTERN FORMING METHOD AND PLASMA PROCESSING METHOD

Document Type and Number:

WIPO Patent Application WO/2023/282114

Kind Code:

A1

Abstract:

In this pattern forming method for forming a pattern film on a substrate, the pattern film contains a triptycene derivative having a triptycene skeleton. The triptycene skeleton has a first plane on which the 1-position, 8-position, and 13-position of the triptycene skeleton are located, and a second plane on which the 4-position, 5-position, and 16-position of the triptycene skeleton are located. The triptycene derivative has a first side chain on one plane-side among the first plane and the second plane, and a second side chain on the other plane-side among the first plane and the second plane or on said one plane-side, the second side chain having a different etch selectivity than the first side chain.

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Inventors:

OOWADA SHIN (JP)
YAMAGUCHI TATSUYA (JP)
ASAKO RYUICHI (JP)
FUKUSHIMA TAKANORI (JP)
SHOJI YOSHIAKI (JP)
KAJITANI TAKASHI (JP)
OGIWARA HIBIKI (JP)

Application Number:

PCT/JP2022/025607

Publication Date:

January 12, 2023

Filing Date:

June 27, 2022

Export Citation:

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Assignee:

TOKYO ELECTRON LTD (JP)
TOKYO INST TECH (JP)

International Classes:

H01L21/3065; C08G77/42

Domestic Patent References:

WO2016010061A1	2016-01-21
WO2021060042A1	2021-04-01

Foreign References:

JP2008308433A	2008-12-25
JP2014047335A	2014-03-17
CN113200858A	2021-08-03
JP2014126623A	2014-07-07
JP2014241374A	2014-12-25
JP2017505709W
JP6219314B2	2017-10-25
JP6272242B2	2018-01-31
JP6793946B2	2020-12-02
JP2021114353A	2021-08-05

Other References:

MATSUTANI, AKIHIRO: "Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, no. 6S1, 10 May 2016 (2016-05-10), pages 06GL01 - 06GL01-3, XP093021650

Attorney, Agent or Firm:

ITOH, Tadashige et al. (JP)

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