Title:
PATTERN PRODUCTION METHOD, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND LAMINATE
Document Type and Number:
WIPO Patent Application WO/2017/209178
Kind Code:
A1
Abstract:
A pattern production method which makes it possible to directly peel the transparent substrate from a laminate comprising a transparent substrate and a resin pattern (for example, an insulation layer) positioned on the surface of the transparent substrate; a semiconductor device production method; and a laminate are provided. This pattern production method involves a peeling step for peeling a transparent substrate from a laminate by irradiating the transparent substrate side of the laminate, which comprises a transparent substrate and a resin pattern positioned on the surface of the transparent substrate, wherein the resin pattern contains at least one type selected from polyimide and polybenzoxazole, and the absorbance of the resin pattern in the wavelength of the irradiation is greater than or equal to 0.5.
Inventors:
INUJIMA TAKAYOSHI (JP)
SAWANO MITSURU (JP)
MAEHARA YOSHIKI (JP)
SAWANO MITSURU (JP)
MAEHARA YOSHIKI (JP)
Application Number:
PCT/JP2017/020251
Publication Date:
December 07, 2017
Filing Date:
May 31, 2017
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/40; G03F7/027; G03F7/20; H01L23/12; H05K3/10
Foreign References:
| JPH01159613A | 1989-06-22 | |||
| JP2015001655A | 2015-01-05 | |||
| JP2012069734A | 2012-04-05 | |||
| JP2009043962A | 2009-02-26 | |||
| JP2013074182A | 2013-04-22 | |||
| JPS6298799A | 1987-05-08 | |||
| JP2004146426A | 2004-05-20 | |||
| JP2004207262A | 2004-07-22 |
Attorney, Agent or Firm:
SIKS & CO. (JP)
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