PHASE CHANGE MATERIAL FOR A PHASE CHANGE MEMORY DEVICE AND METHOD FOR ADJUSTING THE RESISTIVITY OF THE MATERIAL

Title:

PHASE CHANGE MATERIAL FOR A PHASE CHANGE MEMORY DEVICE AND METHOD FOR ADJUSTING THE RESISTIVITY OF THE MATERIAL

Document Type and Number:

WIPO Patent Application WO/2010/125540

Kind Code:

A3

Abstract:

A phase change material for use in a phase change memory device comprises germanium-antimony-tellurium-indium, wherein the phase change material comprises in total more than 30 at% antimony, preferably 5-16 at% germanium, 30-60 at% antimony, 25-51 at% tellurium, and 2-33% at% indium.

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Inventors:

IN T ZANDT MICHAEL ANTOINE ARMAND (NL)
WOLTERS ROBERTUS ADRIANUS MARIA (NL)
WONDERGEM HARRY (NL)

Application Number:

PCT/IB2010/051891

Publication Date:

April 07, 2011

Filing Date:

April 29, 2010

Export Citation:

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Assignee:

NXP BV (NL)
IN T ZANDT MICHAEL ANTOINE ARMAND (NL)
WOLTERS ROBERTUS ADRIANUS MARIA (NL)
WONDERGEM HARRY (NL)

International Classes:

H01L45/00

Domestic Patent References:

WO2005093839A2

2005-10-06

Foreign References:

US20050202200A1	2005-09-15
GB2312083A	1997-10-15
US5254382A	1993-10-19

Attorney, Agent or Firm:

KROTT, Michel Willy François Maria et al. (Intellectual Property & Licensing DepartmentHigh Tech Campus 32, AE Eindhoven, NL)

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