Title:
PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION AND RESTRICTION OF THE PCM MATERIAL
Document Type and Number:
WIPO Patent Application WO/2022/257764
Kind Code:
A1
Abstract:
A phase change memory (PCM) cell comprises: a first electrode located on a substrate; a phase change material layer located adjacent to the first electrode, wherein a first side of the phase change material layer is in direct contact with the first electrode; second electrode located adjacent to phase change material layer, wherein the second electrode is in direct contact with a second side of the phase change material layer, wherein the first side and the second side are different sides of the phase change material layer; and an airgap is located directly above the phase change material layer, wherein the airgap provides space for the phase change material to expand or restrict.
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Inventors:
CHENG KANGGUO (US)
XIE RUILONG (US)
RADENS CARL (US)
LI JUNTAO (US)
XIE RUILONG (US)
RADENS CARL (US)
LI JUNTAO (US)
Application Number:
PCT/CN2022/094882
Publication Date:
December 15, 2022
Filing Date:
May 25, 2022
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
G11C11/56; H01L45/00
Foreign References:
| US20060226409A1 | 2006-10-12 | |||
| US20110284815A1 | 2011-11-24 | |||
| US20060003515A1 | 2006-01-05 | |||
| US20090101880A1 | 2009-04-23 |
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
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