Title:
PHASE CHANGE MEMORY CELL
Document Type and Number:
WIPO Patent Application WO/2023/050664
Kind Code:
A1
Abstract:
The present invention relates to the technical field of microelectronics. Specifically disclosed is a phase change memory cell. A dielectric layer is formed by means of growing an amorphous dielectric material capable of high electrothermal insulation and a crystalline-state dielectric material in an octahedral configuration in a stacked manner, wherein the crystalline-state dielectric material in an octahedral configuration has the same structure as a phase change material; and a crystal nucleus growth center is provided for the phase change material on an interface that is in contact with the phase change material, so as to induce accelerated crystallization of the phase change material. The crystalline-state dielectric material and the amorphous dielectric material capable of high electrothermal insulation are grown in a stacked manner, such that the problem of electric leakage caused by the excessively low resistance of the crystalline-state dielectric material can be prevented, thereby achieving a better insulation effect without losing the crystallization speed, and then better preventing electric leakage.
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Inventors:
TONG HAO (CN)
ZHAO RUIZHE (CN)
MIAO XIANGSHUI (CN)
ZHAO RUIZHE (CN)
MIAO XIANGSHUI (CN)
Application Number:
PCT/CN2022/074185
Publication Date:
April 06, 2023
Filing Date:
January 27, 2022
Export Citation:
Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
International Classes:
H01L45/00
Domestic Patent References:
| WO2021042422A1 | 2021-03-11 |
Foreign References:
| CN113921709A | 2022-01-11 | |||
| CN113241405A | 2021-08-10 | |||
| US20070254455A1 | 2007-11-01 |
Attorney, Agent or Firm:
WUHAN HUAZHIYU INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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