Title:
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/087131
Kind Code:
A1
Abstract:
In certain aspects, a three-dimensional (3D) phase-change memory (PCM) device includes a first PCM cell, a first shrunken PCM cell on the first PCM cell, a second shrunken PCM cell on the first shrunken PCM cell, and a second PCM cell on the second shrunken PCM cell. The first PCM cell includes a first PCM element, the first shrunken PCM cell includes a first shrunken PCM element, the second shrunken PCM cell includes a second shrunken PCM element, and the second PCM cell includes a second PCM element. A width of the first PCM element is larger than that of the first shrunken PCM element, and a width of the second PCM element is larger than that of the second shrunken PCM element.
Inventors:
YANG HAIBO (CN)
LIU JUN (CN)
LIU JUN (CN)
Application Number:
PCT/CN2021/130837
Publication Date:
May 25, 2023
Filing Date:
November 16, 2021
Export Citation:
Assignee:
YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)
International Classes:
G11C13/00
Domestic Patent References:
| WO2017084237A1 | 2017-05-26 |
Foreign References:
| CN112449726A | 2021-03-05 | |||
| US20190189688A1 | 2019-06-20 | |||
| CN112655093A | 2021-04-13 | |||
| US10707417B1 | 2020-07-07 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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