Title:
PHASE CHANGE MEMORY UNIT AND PHASE CHANGE MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/036307
Kind Code:
A1
Abstract:
The present application provides a phase change memory unit and a phase change memory. The phase change storage unit comprises a first electrode, a second electrode, and a phase change material layer; the phase change material layer is located between the first electrode and the second electrode, and comprises a parent phase change material doped with a hafnium (Hf) metal and/or an Hf compound; and the parent phase change material is a material containing at least one element of germanium (Ge), antimony (Sb), tellurium (Te) and bismuth (Bi). The Hf metal and/or the Hf compound may be used as a crystal nucleus in the crystallization process to accelerate the crystallization process of the phase change material layer, so as to improve the SET operation speed; and moreover, doping with the Hf metal and/or the Hf compound can fill vacancies when the parent phase change material is in a crystalline state, and reduce the volume change of the phase change material layer before and after phase change, thereby reducing the generation of holes and improving the cycle performance.
Inventors:
LI XIANG (CN)
GUO YANRONG (CN)
CHEN XIN (CN)
MA PING (CN)
TONG HAO (CN)
GUO YANRONG (CN)
CHEN XIN (CN)
MA PING (CN)
TONG HAO (CN)
Application Number:
PCT/CN2022/118183
Publication Date:
March 16, 2023
Filing Date:
September 09, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L45/00
Foreign References:
| CN111320145A | 2020-06-23 | |||
| CN110335942A | 2019-10-15 | |||
| CN110036479A | 2019-07-19 | |||
| CN107665947A | 2018-02-06 | |||
| US20080073637A1 | 2008-03-27 | |||
| CN202111068031A | 2021-09-13 | |||
| CN202210863735A | 2022-07-21 |
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