PHASE-CHANGE MEMORY

WIPO Patent Application WO/2005/041204

A1

A memory element (4) comprises a phase-change recording medium and stores information by using its high-resistance state and low-resistance state. A read control circuit (11) sends a control signal to a switch circuit (6) to apply an electric pulse to the memory element (4). The voltage generated on this application is detected by a sensing circuit (5) to judge the information stored in the memory element (4) from the voltage change at the rise. Therefore, high-speed read processing on the order of several nanoseconds is possible. When a rewrite processing is carried out, if the information to be written is judged to agree with the stored information, the rewrite processing can be stopped. As a result, wasteful power consumption is avoided to save the power consumption. By using this phase-change memory, high-speed reading of information stored in a memory element is achieved, the rewrite processing is made efficient, and the power consumption is reduced.

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NAKAYAMA KAZUYA (JP)
KITAGAWA AKIO (JP)

PCT/JP2004/015876

May 06, 2005

October 20, 2004

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KANAZAWA UNIVERSITY TECHNOLOGY (JP)
NAKAYAMA KAZUYA (JP)
KITAGAWA AKIO (JP)

G11C13/00; G11C16/02; G11C16/26; (IPC1-7): G11C13/00

JP2003187590A	2003-07-04
JP2002140888A	2002-05-17

Takashima, Hajime (1-1 Fushimimachi 4-chome, Chuo-k, Osaka-shi Osaka, JP)

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