Title:
PHASE SHIFT PHOTOMASK AND METHOD FOR IMPROVING PRINTABILITY OF A STRUCTURE ON A WAFER
Document Type and Number:
WIPO Patent Application WO2005050310
Kind Code:
A3
Abstract:
A phase shift photomask and method for improving printability of a structure on a wafer are disclosed. The method includes providing a photomask including a zero degree PSW formed on a top surface of a substrate and a 180 degree PSW formed in a first region of the substrate. An orthogonal PSW that facilitates projection of an increased intensity of radiant energy through a second region of the substrate during a lithography process is formed in the second region between the zero degree PSW and the 180 degree PSW.
More Like This:
Inventors:
NAKAGAWA KENT (US)
Application Number:
PCT/US2004/038900
Publication Date:
February 23, 2006
Filing Date:
November 17, 2004
Export Citation:
Assignee:
DUPONT PHOTOMASKS INC (US)
NAKAGAWA KENT (US)
NAKAGAWA KENT (US)
International Classes:
G03F1/00; G03C; (IPC1-7): G01F9/00; G03C5/00; G03F9/00
Foreign References:
| US20020094492A1 | 2002-07-18 | |||
| US5428478A | 1995-06-27 | |||
| US20020058188A1 | 2002-05-16 |
Download PDF:
Previous Patent: FILM SOUNDTRACK REVIEWING SYSTEM
Next Patent: STABILIZED HIGH-SPEED EMULSIONS AND PHOTOTHERMOGRAPHIC MATERIALS
Next Patent: STABILIZED HIGH-SPEED EMULSIONS AND PHOTOTHERMOGRAPHIC MATERIALS