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Title:
PHOTO- AND ELECTRON RESIST
Document Type and Number:
WIPO Patent Application WO/1983/002339
Kind Code:
A1
Abstract:
The photo- and electron resist contains a light-sensitive compound, a film-forming compound, a sensitizer, an organic solvent, an additive which forms a donor-acceptor complex with said compounds and reaction products thereof, which complex quenches the luminescence and improves the stability of the resist. The photo- and electron resist finds application in microelectronics, optics, printing arts, precise mechanical engineering, where structures of semiconductor devices and solid-state circuit are fabricated through the use of the resists.

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Inventors:
MOLODNYAKOV SERGEY PETROVICH (SU)
FEDOROV YURY IVANOVICH (SU)
KUZNETSOV VITALY ALEKSEEVICH (SU)
EGOROCHKIN ALEKSEY NIKOLAEVICH (SU)
BIRYUKOVA TAMARA GRIGOREVNA (SU)
RAZUVAEV GRIGORY ALEKSEEVICH (SU)
Application Number:
PCT/SU1981/000078
Publication Date:
July 07, 1983
Filing Date:
December 21, 1981
Export Citation:
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Assignee:
INST CHIMII AKADEMII NAUK SSSR (SU)
International Classes:
G03F7/038; G03C1/72; G03F7/09; H01L21/30; (IPC1-7): G03C1/68
Foreign References:
GB1474817A1977-05-25
GB1481909A1977-08-03
GB1602724A1981-11-18
US3977874A1976-08-31
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